philips semiconductors product specification silicon diffused power transistor BU2530AL general description new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 khz. quick reference data symbol parameter conditions typ. max. unit v cesm collector-emitter voltage peak value v be = 0 - 1500 v v ceo collector-emitter voltage (open base) - 800 v i c collector current (dc) - 16 a i cm collector current peak value - 40 a p tot total power dissipation t mb 25 ?c - 125 w v cesat collector-emitter saturation voltage i c = 9.0 a; i b = 1.64 a - 5.0 v i csat collector saturation current 9 - a t s storage time i csat = 9.0 a; i b(end) = 1.3 a 3.5 4.5 m s pinning - sot430 pin configuration symbol pin description 1 base 2 collector 3 emitter heat collector sink limiting values limiting values in accordance with the absolute maximum rating system (iec 134) symbol parameter conditions min. max. unit v cesm collector-emitter voltage peak value v be = 0 v - 1500 v v ceo collector-emitter voltage (open base) - 800 v i c collector current (dc) - 16 a i cm collector current peak value - 40 a i b base current (dc) - 10 a i bm base current peak value - 15 a -i b(av) reverse base current average over any 20 ms period - 200 ma -i bm reverse base current peak value 1 -10a p tot total power dissipation t mb 25 ?c - 125 w t stg storage temperature -55 150 ?c t j junction temperature - 150 ?c thermal resistances symbol parameter conditions typ. max. unit r th j-mb junction to mounting base - - 1.0 k/w r th j-a junction to ambient in free air 35 - k/w 123 b c e 1 turn-off current. september 1997 1 rev 1.200
philips semiconductors product specification silicon diffused power transistor BU2530AL static characteristics t mb = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit i ces collector cut-off current 2 v be = 0 v; v ce = v cesmmax - - 1.0 ma i ces v be = 0 v; v ce = v cesmmax ; - - 2.0 ma t j = 125 ?c i ebo emitter cut-off current v eb = 7.5 v; i c = 0 a - - 1.0 ma bv ebo base-emitter breakdown voltage i b = 1 ma 7.5 14 - v v cesat collector-emitter saturation voltage i c = 9.0 a; i b = 1.64 a - - 5.0 v v besat base-emitter saturation voltage i c = 9.0 a; i b = 1.64 a - - 1.0 v h fe dc current gain i c = 1 a; v ce = 5 v - 17 - h fe i c = 9 a; v ce = 5 v 5.5 8 10 dynamic characteristics t mb = 25 ?c unless otherwise specified symbol parameter conditions typ. max. unit switching times (32 khz line i csat = 9.0 a; l c = 200 m h; c fb = 13 nf; deflection dynamic test circuit). v cc = 138 v; i b(end) = 1.3 a; -i bm = 4.5 a; -v bb = 4 v; l b = 1 m h t s turn-off storage time 3.5 4.5 m s t f turn-off fall time 0.14 0.25 m s fig.1. switching times waveforms. fig.2. switching times definitions. ic ib vce icsat ibend 32us 13us 10us t t t transistor diode icsat 90 % 10 % tf ts ibend ic ib t t - ibm 2 measured with half sine-wave voltage (curve tracer). september 1997 2 rev 1.200
philips semiconductors product specification silicon diffused power transistor BU2530AL fig.3. switching times test circuit . fig.4. high and low dc current gain. h fe = f (i c ) v ce = 1 v fig.5. high and low dc current gain. h fe = f (i c ) v ce = 5 v fig.6. typical collector-emitter saturation voltage. v ce sat = f (i c ); parameter i c /i b fig.7. typical base-emitter saturation voltage. v be sat = f (i b ); parameter i c fig.8. typical turn-off losses. p tot = f (i b ); parameter i c ; f = 32 khz + 150 v nominal adjust for icsat lc cfb t.u.t. lb ibend -vbb 0.1 1 10 100 0.01 0.1 1 10 vcesat / v bu2530/2al ic / a ic/ib = 10 ic/ib = 5 tj = 85 c tj = 25 c 0.01 0.1 1 10 100 1 10 100 hfe bu2530/2al ic / a vce = 1 v tj = 85 c tj = 25 c 01234 0.6 0.7 0.8 0.9 1 vbesat / v bu2530/2al ic = 9 a ic = 7 a ib / a tj = 85 c tj = 25 c 0.01 0.1 1 10 100 1 10 100 hfe bu2530/2al ic / a vce = 5 v tj = 85 c tj = 25 c 01234 1 10 100 ptot / w BU2530AL ib / a tj = 85 c tj = 25 c september 1997 3 rev 1.200
philips semiconductors product specification silicon diffused power transistor BU2530AL fig.9. typical collector storage and fall time. ts = f (i b ); tf = f (i b ); parameter i c ; t j = 85?c; f = 32 khz fig.10. normalised power dissipation. pd% = 100 p d /p d 25?c = f (t mb ) fig.11. transient thermal impedance. z th j-mb = f(t); parameter d = t p /t fig.12. test circuit rbsoa. v cc = 150 v; -v bb = 1 - 5 v; l c = 1.5 mh; v cl = 1450 v; l b = 1 - 3 m h; c fb = 1 - 10 nf; i b(end) = 1.3 - 2.6 a fig.13. reverse bias safe operating area. t j t jmax 01234 0 2 4 6 8 10 ts/tf / us BU2530AL ib / a lb ibend -vbb lc t.u.t. vcc vcl cfb 0 20 40 60 80 100 120 140 tmb / c pd% normalised power derating 120 110 100 90 80 70 60 50 40 30 20 10 0 bu2530/32al 100 1000 1500 0 10 20 30 40 ic / a vce / v area where fails occur 1.0e-06 1e-04 1e-02 1e+00 0.001 0.01 0.1 1 10 0.2 0.1 0.05 0.02 0.5 d = 0 zth / k/w BU2530AL/32al t / s d = t p t p t t p t d september 1997 4 rev 1.200
philips semiconductors product specification silicon diffused power transistor BU2530AL mechanical data dimensions in mm net mass: 9 g fig.14. sot430; pin 2 connected to mounting base. 6.0 10.0 2.5 25.5 19.5 min 0.8 3.1 20.5 max 5.45 5.45 2.5 max 26.5 1.0 3.5 max 3.5 3.0 max 0.8 max 5.3 max seating plane 0.4 m 4.0 3.0 3.0 3.0 1.5 1.5 september 1997 5 rev 1.200
philips semiconductors product specification silicon diffused power transistor BU2530AL definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. philips electronics n.v. 1997 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. september 1997 6 rev 1.200
|
